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t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 1 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? ku - band communications general description triquint s tga2579 - 2 - f l is a power amplifier o p erating from 14.0 to 1 5.35 ghz and typically provides 43 dbm of saturated output power, 27 % power - added efficien c y and 35 db of small signal gain at mid band. the tga2579 - 2 - fl features low loss ground - signal - ground (gsg) rf transi tions designed to interface with a coplanar waveguide multilayer board. ideally suited for ku - band communications, the tga2579 - 2 - fl supports key commercial and defense - related frequency bands. triquints 0.25um gan on sic process offers superior electric al performance while maintaining high reliability. i n addition, the use of sic substrates provides optimum thermal performance necessary for reliable high power operation. lead - free and rohs compliant. ordering information part eccn description t ga 2579 - 2 - fl 3a001.b. 2 .b gan power amplifier product features ? frequency range: 14.0 C 15.35 ghz ? p sat : 4 3 dbm ? pae: 27 % ? small signal gain: 3 5 db ? integrated voltage detector ? bias: v d = 25 v, i d q = 1.0 a, v g = - 2.4 v typical ? package dimensions: 11 .3 8 x 17 .3 3 x 3 . 0 mm pad configuration pad no. symbol 1 , 7, 8, 14 v d 2, 6 v g 3 , 5, 10, 12 gnd 4 rf in 9 voltage detector 11 rf out 1 3 n/c functional block diagram 1 2 3 4 5 6 7 8 9 10 11 12 13 14
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 2 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 40 v drain to gate voltage (v d - v g ) 100 v gate voltage range (v g ) - 5 to 0 v drain current (i d ) 4.3 a gate current (i g ) - 16 to 84 ma power dissipation (p diss ) 131 w rf input power, cw, 50 , t = 25 c (p in ) 29 dbm channel temp erature (t ch ) 275 c mounting temperature (30 seconds) 260 c storage temperature - 40 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 25 v drain current (i d q ) 1000 ma d rain current under rf drive ( i d _ d rive ) 2900 ma gate voltage (v g ) - 2 . 4 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise not ed : 25 c, v d = 25 v, i d q = 10 00 ma , v g = - 2 .4 v typical , cw. parameter min typical max units operational frequency range 1 4.0 1 5.35 ghz small signal gain @ mid band 3 5 db input return loss 8 db output return loss 7 db gain @ pin = 0dbm 34 db output power at saturation (pin = 24 dbm) 43 dbm power - added efficiency (pin = 24 dbm) 2 7 % output toi 44 dbm gain temperature coefficient - 0.0 5 db/c power temperature coefficient - 0.00 4 db m /c
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 3 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com notes: (1) thermal resi stance measured at back of the package. thermal and reliability info rmation parameter test conditions value units thermal resistance , j c (1) tbaseplate = 85 c 1. 5 oc/w channel temperature, t ch (under rf drive) tbaseplate = 85 c, v d = 25 v , i d _ d rive = 2900 ma, p out = 43.0 dbm , p diss = 53 w 16 2 c median lifetime, t m (under rf drive) 4.85 x 10^ 8 hrs channel temperature, t ch (under rf drive) tbaseplate = 85 c, v d = 30 v , i d _ d rive = 3060 ma, p out = 44.0 dbm, p diss = 66 w 180 c median lifetime, t m (under rf drive ) 7.99 x 10^7 hrs median lifetime test conditions: v d = 40v; failure criteria is 10% reduction in i d _ max
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 4 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance c onditions unless otherwise specified : v d = 25 v , i d q = 1.0 a, v g = - 2 .4 v typ ical , cw 20 24 28 32 36 40 13.5 14 14.5 15 15.5 gain (db) frequency (ghz) gain power vs. frequency temp.=+25 c p in = 0dbm 23 28 33 38 43 48 13.5 14 14.5 15 15.5 p out (dbm) frequency (ghz) power vs. frequency temp.=+25 c p sat @ p in = 24 dbm p1 db 5 10 15 20 25 30 35 40 45 0 7 14 21 28 p out (dbm), gain (db), pae (%) p in (dbm) p out , gain, pae vs. p in @ 13.75 ghz temp.=+25 c p out gain pae 18 24 30 36 42 48 13.5 14 14.5 15 15.5 p out (dbm), pae (%) frequency (ghz) power, pae vs. frequency temp.=+25 c p out pae p in = 24 dbm 0 5 10 15 20 25 3 10 17 24 31 38 13.5 14 14.5 15 15.5 return loss (db) gain (db) frequency (ghz) s - parameters vs. frequency gain irl orl temp.=+25 c 600 900 1200 1500 1800 2100 2400 2700 3000 5 10 15 20 25 30 35 40 45 0 7 14 21 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in @ 13.75 ghz temp.=+25 c p out i d
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 5 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance c onditions unless otherwise specified : v d = 25 v , i d q = 1.0 a, v g = - 2 . 4 v typical , cw 30 34 38 42 46 50 13.5 14 14.5 15 15.5 p sat (dbm) frequency (ghz) p sat vs. v d 25v 1.0a 30v 1.0a temp.=+25 c p in = 24dbm 10 15 20 25 30 35 40 13.5 14 14.5 15 15.5 pae (%) frequency (ghz) pae vs. v d 25v 1.0a 30v 1.0a temp.=+25 c p in = 24dbm 5 10 15 20 25 30 35 40 45 0 7 14 21 28 p out (dbm), gain (db), pae (%) p in (dbm) p out , gain, pae vs. p in @ 14.4 ghz temp.=+25 c p out gain pae 600 900 1200 1500 1800 2100 2400 2700 3000 5 10 15 20 25 30 35 40 45 0 7 14 21 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in @ 14.4 ghz temp.=+25 c p out i d 5 10 15 20 25 30 35 40 45 0 7 14 21 28 p out (dbm), gain (db), pae (%) p in (dbm) p out , gain, pae vs. p in @ 15.35 ghz temp.=+25 c p out gain pae 600 1000 1400 1800 2200 2600 3000 3400 3800 5 10 15 20 25 30 35 40 45 0 7 14 21 28 drain current (ma) p out (dbm) input power (dbm) power, i d vs. p in @ 15.35 ghz temp.=+25 c p out i d
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 6 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance c onditions unless otherwise specified : v d = 25 v , i dq = 1.0 a, v g = - 2. 4 v typical, cw 35 37 39 41 43 45 13.5 14 14.5 15 15.5 p out (dbm) frequency (ghz) power vs. frequency vs. temperature -40c +25c +85c p in = 24dbm 15 20 25 30 35 40 13.5 14 14.5 15 15.5 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 24dbm -40 -30 -20 -10 0 30 33 36 39 42 imd3 (dbc) p out (dbm/tone) imd3 vs. p out vs. frequency 13.75 ghz 14.4 ghz 15.35 ghz temp.=+25 c 0 1 2 3 4 5 29 33 37 41 45 v det (v) output power (dbm/tone) v det vs. p out vs. frequency 13.75 ghz 14.4 ghz 15.35 ghz temp.=+25 c 30 35 40 45 50 30 33 36 39 42 output toi (dbm) p out (dbm/tone) output toi vs. p out vs. frequency 13.75 ghz 14.4 ghz 15.35 ghz temp.=+25 c 5 10 15 20 25 30 35 40 45 13.5 14 14.5 15 15.5 gain (db) frequency (ghz) gain (s21) vs. frequency vs. temperature -40c +25c +85c
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 7 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com application circuit notes: to prevent damage to the device due to overshoot or oscillation issues, we recommend that current limits for all power supplies are set properly for each power supply befor e applying the voltage. the following are recommended current limits for each power supply: set 6 0 ma current limit to v g set 4 a current limit to v d bias - up procedure 1. apply - 5 .0 v to v g 2. apply +25 v to v d. 3. adjust v g until i dq = 10 00 ma (v g ~ - 2 . 4 v typ.) 4. turn on rf supply. bias - down procedure 1. turn off rf supply. 2. reduce v g to - 5 .0 v. ensure i dq ~ 0 ma 3. set v d to 0 v. 4. set v g to 0 v.
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 8 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com evaluation board layout bill of materials reference design value description manufacturer part n umber c 1 C c6 1 .0 uf cap, 120 6, 50v, 10 % , xr7 kemet c1206c105k5ractu c7 C c12 0.1 uf cap, 0603, 50v, 10 % , xr7 kemet c0603c104k5ractu
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 9 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com pin layout pin description pin symbol description 1 , 7, 8, 14 v d drain voltage. bias network is requir ed; must be biased from each pin ; see application circuit on page 7 as an example. 2, 6 v g gate voltage. bias network is required; must be biased from both sides ; s ee application circuit on page 7 as an example. 3 , 5, 10, 12 gnd connect to ground ; s ee a pplication circuit on page 7 as an example.. 4 rf in rf input. 9 v d et voltage detector; see application circuit on page 7 as an example. 11 rf out rf output. 1 3 n/c no internal connection; can be left open or grounded.
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 10 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com mechanical information al l dimensions are in millimeter (mm) . unless specifie d o therwise . marking: part number C t ga2579 - 2 - fl year / weak code C wwyy serial number - zzzz batch id C m xxx
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 11 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com assembly notes 1. clean the board or module with alcohol. allow it to dr y fully. 2. nylock screws are re co mmended for mounting the tga2579 - 2 - fl to the board. 3. to improve the thermal and rf performance, we recommend a heat sink attached to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the tga2579 - 2 - fl base. 4. apply solder to each pin of the tga2579 - 2 - fl. 5. clean the assembly with alcohol.
t ga2579 - 2 - fl 20 w ku - band gan power amplifier preliminary datasheet: rev - 08 - 16 - 13 - 12 of 12 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 1b value : 500 v test: human body model (hbm) standard: jedec standard jesd22 - a114 msl rating rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipme nt). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free level 3 at +260c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j - std - 020 eccn us department of commerce: 3a001.b. 2 .b contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibili ty or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with al l faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for t riquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to c ause severe personal injury or death.

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